smd type ic smd type transistors features n-channel 7.0 a, 30 v r ds(on) = 0.028 @v gs =10v r ds(on) = 0.040 @v gs =4.5v p-channel -5 a, -30 v r ds(on) = 0.052 @v gs =- 10 v r ds(on) = 0.080 @v gs =-4.5v fast switching speed high power and handling capability in a widely used surface mount package absolute maximum ratings ta = 25 parameter symbol n-channel p- channel unit drain to source voltage v dss 30 30 v gate to source voltage v gs 20 20 v drain current continuous (note 1a) 7 -5 a drain current pulsed 20 -20 a power dissipation for single operation p d w power dissipation for single operation (note 1a) (note 1b) (note 1c) operating and storage temperature t j ,t stg thermal resistance junction to ambient (note 1a) r ja /w thermal resistance junction to case (note 1) r jc /w -55to150 78 40 2 i d 1.6 p d w 1 0.9 4008-318-123 sales@twtysemi.com 1 of 3 http://www.twtysemi.com smd type ic smd type transistors KDS8958 smd type ic smd type transistors smd type ic smd type transistors product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit v gs =0v,i d = 250 a n-ch 30 v gs =0v,i d = -250 a p-ch -30 i d = 250 a, referenced to 25 n-ch 25 i d =-250 a, referenced to 25 p-ch -22 v ds =24v,v gs =0v n-ch 1 v ds =-24v,v gs =0v p-ch -1 v gs = 20v, v ds =0v n-ch 100 v gs = 20 v, v ds =0v p-ch 100 v ds =v gs ,i d = 250 a n-ch 1 1.6 3 v ds =v gs ,i d =-250 a p-ch -1 -1.7 -3 i d = 250 a, referenced to 25 n-ch -4.3 i d =-250 a, referenced to 25 p-ch 4 v gs =10v,i d =7a 21 28 v gs =10v,i d =7a,t j =125 32 42 v gs =4.5v,i d =6 a 27 40 v gs =-10v,i d =-5 a 41 52 v gs =-10v,i d =-5 a,tj = 125 58 78 v gs =-4.5v,i d =-4a 58 80 v gs =10v,v ds =5v n-ch 20 v gs =-10v,v ds =-5v p-ch -20 v ds =5v,i d =7a n-ch 19 v ds =-5v,i d =-5a p-ch 11 n-channel n-ch 789 v ds =10v,v gs = 0 v,f = 1.0 mhz p-ch 690 n-ch 173 p-channel p-ch 306 v ds =-10v,v gs = 0 v,f = 1.0 mhz n-ch 66 p-ch 77 n-channel n-ch 6 12 v dd =10v,i d = 1 a, p-ch 6.7 13.4 v gs =10v,r gen =6 (note 2) n-ch 10 18 p-ch 9.7 19.4 p-channel n-ch 18 29 v dd =-10v,i d = -1 a, p-ch 19.8 35.6 v gs =-10v,r gen =6 (note 2) n-ch 5 12 p-ch 12.3 22.2 n-channel n-ch 16 26 v ds =15v,i d =7a,v gs =10v(note 2) p-ch 14 23 n-ch 2.5 p-channel p-ch 2.2 v ds =-15v,i d =-5a,v gs =-10v(note 2) n-ch 2.1 p-ch 1.9 nc testconditons ns ns nc nc pf pf ns ns a s pf p-ch v mv/ a na v mv/ m q gd gate-drain charge q g total gate charge gate-source charge q gs t d(off) turn-off delay time t f turn-off fall time t d(on) turn-on delay time tr turn-on rise time c iss c oss c rss input capacitance output capacitance reverse transfer capacitance g fs forward transconductance gate threshold voltage temperature coefficient r ds(on) static drain-source on-resistance i d(on) on-state drain current r ds(on) static drain-source on-resistance v gs(th) gate threshold voltage n-ch b vdss drain-source breakdown voltage breakdown voltage temperature coefficient gate-body leakage i gss i dss zero gate voltage drain current 4008-318-123 sales@twtysemi.com 2 of 3 http://www.twtysemi.com smd type ic smd type transistors KDS8958 smd type ic smd type transistors smd type ic smd type transistors product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol min typ max unit n-ch 1.3 p-ch -1.3 v gs =0v,i s = 1.3a (not 2) n-ch 0.74 1.2 v gs =0v,i s = -1.3a (not 2) p-ch -0.76 -1.2 a v testconditons v sd drain-source diode forward voltage i s maximum continuous drain-source diode forward current KDS8958 4008-318-123 sales@twtysemi.com 3 of 3 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors product specification
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